New Hybrid Digital Circuit Design Techniques for Reducing Subthreshold Leakage Power in Standby Mode

نویسندگان

  • Manish Kumar
  • Md. Anwar Hussain
  • Sajal K. Paul
چکیده

In this paper, four new hybrid digital circuit design techniques, namely, hybrid multi-threshold CMOS complete stack technique, hybrid multi-threshold CMOS partial stack technique, hybrid super cutoff complete stack technique and hybrid super cutoff partial stack technique, have been proposed to reduce the subthreshold leakage power dissipation in standby modes. Techniques available in literature are compared with our proposed hybrid circuit design techniques. Performance parameters such as subthreshold leakage power dissipation in active and standby modes, dynamic power dissipation and propagation delay, are compared using existing and proposed hybrid techniques for a two input AND gate. Reduction of subthreshold leakage power dissipation in standby mode is given more importance, in comparison with the other circuit design performance parameters. It is found that there is reduction in subthreshold leakage power dissipation in standby and active modes by 3.5× and 1.15× respectively using the proposed hybrid super cutoff complete stack technique as compared to the existing multi-threshold CMOS (MTCMOS) technique. Also a saving of 2.50× and 1.04× in subthreshold leakage power dissipation in standby and active modes respectively were observed using hybrid super cutoff complete stack technique as compared to the existing super cutoff CMOS (SCCMOS) technique. The proposed hybrid super cutoff stack technique proved to perform better in terms of subthreshold leakage power dissipation in standby mode in comparison with other techniques. Simulation results using Microwind EDA tool in 65 nm CMOS technology is provided in this paper.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Subthreshold leakage control techniques for low power digital circuits

Scaling and power reduction trends in future technologies will cause subthreshold leakage currents to become an increasingly large component of total power dissipation. As a result, new techniques are needed in order to provide high performance and low power circuit operation. This dissertation develops new circuit techniques that exploit dual threshold voltages and body biasing in order to red...

متن کامل

Minimization of Leakage Current in VLSI Design

To meet the ever-increasing demand of high performance systems, more and more functions are integrated into single chip by scaling down the size of device. Leakage current is becoming an increasingly important fraction of total power dissipation of integrated circuits. As technology scales leakage current grows exponentially and become and increasingly large component of total power dissipation...

متن کامل

Leakage Power Reduction Through Hybrid Multi-Threshold CMOS Stack Technique In Power Gating Switch

In this paper Two Hybrid digital circuit design techniques are produced as Hybrid MultiThreshold CMOS complete stack technique and Hybrid Multi-Threshold CMOS partial stack technique for reducing the leakage power dissipation in mode transistion.Tri-modal switch are performance depends on these two techniques reduce the leakage power dissipation. These technique are implemented in the CADENCE v...

متن کامل

A Gate-Level Leakage Power Reduction Method for Ultra-Low-Power CMOS Circuits†

In order to reduce the power dissipation of CMOS products, semiconductor manufacturers are reducing the power supply voltage. This requires that the transistor threshold voltages be reduced as well to maintain adequate performance and noise margins. However, this increases the subthreshold leakage current of p and n MOSFETs, which starts to offset the power savings obtained from power supply re...

متن کامل

A Gate-Level Leakage Power Reduction Method for Ultra-Low-Power CMOS Circuitst

Abstract In order to reduce the power dissipation of CMOS products, semiconductor manufacturers are reducing the power supply voltage. This requires that the transistor threshold voltages be reduced as well to maintain adequate performance and noise margins. However, this increases the subthreshold leakage current of p and n MOSFETs, which starts to offset the power savings obtained from power ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013